Reactive ion etching (RIE) is a plasma etching process that adds a charge to the part being etched which induces a directional component to the etching process. This directionality of the etch enables significantly smaller etch feature sizes which is commonly used in the semiconductor industry.
Reactive ion etching (RIE) is a plasma etching process that uses a charge to add a directional component to the etching process. This RIE process produces a charge on the part. When this part is charged the etching component of the plasma holds an opposite charge resulting in directional collision of the etch component on the part. The resulting etch is directional enabling much smaller feature size. RIE also enables manufacturers to etch at a faster rate than normal etching methods.
Control Cabinet:
W 560 mm H 560 mm D 420 mm
Chamber:
Ø 3.9 in, L 10.9 in
Chamber Volume:
2
Gas Supply:
1 gas channel via needle valve
Generator:
1 pc. with 40 kHz
(optional: 13.56 MHz or 2.45 GHz)
Control:
Semi-Automatic
Control Cabinet:
W 600 mm H 1700 mm D 800 mm
Chamber:
Ø 5.9 in, L 12.6 in
Chamber Volume:
5
Gas Supply:
Mass flow controllers
Generator:
1 pc. with 40 kHz
(optional: 13.56 MHz or 2.45 GHz)
Control:
PC
Control Cabinet:
W 600 mm H 1700 mm D 800 mm
Chamber:
W 15.8" x H 15.8" x D 24.6"
Chamber Volume:
100
Gas Supply:
Mass flow controllers
Generator:
1 pc. with 40 kHz
(optional: 13.56 MHz or 2.45 GHz)
Control:
PC
Thierry Germany